K6a65d mosfet n-ch 650v 5a to-220sis K6A60D Trans MOSFET N-CH 600V 6A View All Newest Products from INFINEON. UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. These k6a65d are extremely powerful in managing power supplies and current flows along with a host of other electronic functions. Whether you are looking for these k6a65d to use at your residences or perform other commercial activities, they are unmatched. N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK Datasheet — production data Features 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Applications Switching applications.
Part Number : K6A650, Correct Part Number : K6A65D, TK6A65D
Function : 650V, N-Channel MOSFET
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Package : TO-220 Type
Manufactures : Toshiba Semiconductor
Images :
Description :
1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Applications
Switching Regulator
Mosfet K11a65d
Pinout :
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Transistor Mosfet K6a65d
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 650 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 6 A
4. Drain power dissipation (Tc = 25°C) : PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = +150 °C
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 6 A
4. Drain power dissipation (Tc = 25°C) : PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = +150 °C